The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2015

Filed:

Mar. 03, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chih-Chien Wang, Changhua County, TW;

Chihy-Yuan Cheng, Tainan, TW;

Chuan-Ling Wu, Changhua County, TW;

Chun-Chang Chen, Tainan, TW;

Wang-Pen Mo, Pingtung County, TW;

Feng-Jia Shiu, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14685 (2013.01); H01L 27/14621 (2013.01); H01L 27/14625 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14645 (2013.01); H01L 27/14689 (2013.01);
Abstract

A method for manufacturing the image sensor device is provided. The method includes depositing a first dielectric layer over a back surface of a substrate, forming a ridge over the first dielectric layer, depositing a second dielectric layer over the first dielectric layer, including filling in a space between two adjacent ridges. The method also includes removing the ridge to form a trench in the second dielectric layer and forming a metal grid in the trench.


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