The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Jul. 06, 2012
Chien Rhone Wang, Hsin Chu, TW;
Kewei Zuo, Xinbei, TW;
Chen-hua Yu, Hsinchu, TW;
Jing-cheng Lin, HsinChu County, TW;
Yen-hsin Liu, New Taipei, TW;
Chien Rhone Wang, Hsin Chu, TW;
Kewei Zuo, Xinbei, TW;
Chen-Hua Yu, Hsinchu, TW;
Jing-Cheng Lin, HsinChu County, TW;
Yen-Hsin Liu, New Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides one embodiment of an integrated circuit (IC) fabrication method to form an IC structure having one or more through silicon via (TSV) features. The IC fabrication method includes performing a plurality of processing steps; collecting physical metrology data from the plurality of processing steps; collecting virtual metrology data from the plurality of processing steps based on the physical metrology data; generating a yield prediction to the IC structure based on the physical metrology data and the virtual metrology data; and identifying an action at an earlier processing step based on the yield prediction.