The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2015

Filed:

May. 18, 2012
Applicants:

Ho-jin Lee, Seoul, KR;

Byung Lyul Park, Seoul, KR;

Seyoung Jeong, Suwon-si, KR;

Hyunsoo Chung, Hwaseong-si, KR;

Gilheyun Choi, Seoul, KR;

Inventors:

Ho-Jin Lee, Seoul, KR;

Byung Lyul Park, Seoul, KR;

SeYoung Jeong, Suwon-si, KR;

Hyunsoo Chung, Hwaseong-si, KR;

Gilheyun Choi, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/7682 (2013.01); H01L 23/481 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/13 (2013.01); H01L 2224/13023 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13025 (2013.01);
Abstract

A microelectronic device includes a substrate having a trench extending therethrough between an active surface thereof and an inactive surface thereof opposite the active surface, a conductive via electrode extending through the substrate between sidewalls of the trench, and an insulating layer extending along the inactive surface of the substrate outside the trench and extending at least partially into the trench. The insulating layer defines a gap region in the trench that separates the substrate and the via electrode. Related devices and methods of fabrication are also discussed.


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