The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Oct. 16, 2013
Tokyo Electron Limited, Tokyo, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A disclosed method of depositing a silicon film on a substrate mounted on a turntable and can pass by rotation through a first process area and a second process area, which are separately arranged along a peripheral direction in a cylindrical chamber set to have a first temperature capable of cutting a Si—H bond includes a molecular layer deposition step of supplying a SiHgas set to have a second temperature less than the first temperature when the substrate passes through the first process area thereby forming a SiHmolecular layer on a surface of the substrate, and a hydrogen desorption step of causing the substrate, on a surface of which the SiHmolecular layer is formed, to pass through the second process area maintained to have the first temperature thereby cutting the Si—H bond and leaving only a silicon atomic layer on the surface of the substrate.