The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Nov. 08, 2011
Hideo Ohno, Miyagi, JP;
Shoji Ikeda, Miyagi, JP;
Hiroyuki Yamamoto, Tokyo, JP;
Yosuke Kurosaki, Tokyo, JP;
Katsuya Miura, Tokyo, JP;
Hideo Ohno, Miyagi, JP;
Shoji Ikeda, Miyagi, JP;
Hiroyuki Yamamoto, Tokyo, JP;
Yosuke Kurosaki, Tokyo, JP;
Katsuya Miura, Tokyo, JP;
TOHOKU UNIVERSITY, Sendai-Shi, JP;
Abstract
Provided is a tunnel magnetoresistive effect element such that a high TMR ratio and a low write current can be realized, and the thermal stability factor (E/kT) of a recording layer and a pinned layer is increased while an increase in resistance of the element as a whole is suppressed, thus enabling a stable operation. On at least one of a recording layerand a pinned layereach comprising CoFeB, electrically conductive oxide layersandare disposed on a side opposite to a tunnel barrier layer