The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2015

Filed:

Oct. 11, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Ching-Fang Yu, Hsinchu, TW;

Ting-Hao Hsu, Hsinchu, TW;

Sheng-Chi Chin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/22 (2012.01); G03F 1/24 (2012.01);
U.S. Cl.
CPC ...
G03F 1/22 (2013.01);
Abstract

A lithographic process will use a mask or photomask. The photomask includes a first material layer, the first material layer providing a first outer surface of the photomask. The photomask also includes a second material layer over the first material layer, the second material layer providing a second outer surface of the photomask. The two outer surfaces are substantially in parallel and a distance between the two outer surfaces along a first axis perpendicular to the two outer surfaces defines a thickness of the photomask. Also, the two outer surfaces are connected by a plurality of sides, at least one of the sides is not perpendicular to the two outer surfaces and the at least one of the sides provides substantial area for holding the lithographic photomask.


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