The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2015
Filed:
Mar. 01, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Che-Cheng Chang, New Taipei, TW;
Yi-Ren Chen, Guishan Township, TW;
Chang-Yin Chen, Taipei, TW;
Yi-Jen Chen, Hsin-Chu, TW;
Ming Zhu, Singapore, SG;
Yung-Jung Chang, Cyonglin Township, TW;
Harry-Hak-Lay Chuang, Singapore, SG;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Disclosed herein is a method forming a device comprising forming a high-k layer over a substrate and applying a dry plasma treatment to the high-k layer and removing at least a portion of one or more impurity types from the high-k layer. The dry plasma treatment may be chlorine, fluorine or oxygen plasma treatment. A cap layer may be applied on the high-k layer and a metal gate formed on the cap layer. An interfacial layer may optionally be formed on the substrate, with the high-k layer is formed on the interfacial layer. The high-k layer may have a dielectric constant greater than 3.9, and the cap layer may optionally be titanium nitride. The plasma treatment may be applied after the high-k layer is applied and before the cap layer is applied or after the cap layer is applied.