The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2015
Filed:
Mar. 31, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Tzu-Yen Hsieh, Taipei, TW;
Ming-Ching Chang, Hsinchu, TW;
Yuan-Sheng Huang, Taichung, TW;
Ming-Chia Tai, Hsinchu County, TW;
Chao-Cheng Chen, Shin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes receiving a semiconductor device, patterning a first hard mask to form a first recess in a high-resistor (Hi-R) stack, removing the first hard mask, forming a second recess in the Hi-R stack, forming a second hard mask in the second recess in the Hi-R stack. A HR can then be formed in the semiconductor substrate by the second hard mask and a gate trench etch.