The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2015
Filed:
Nov. 25, 2013
United Microelectronics Corp., Hsin-Chu, TW;
Po-Cheng Huang, Kaohsiung, TW;
I-Ming Tseng, Kaohsiung, TW;
Yu-Ting Li, Chiayi, TW;
Chun-Hsiung Wang, Kaohsiung, TW;
Wu-Sian Sie, Tainan, TW;
Yi-Liang Liu, Tainan, TW;
Chia-Lin Hsu, Tainan, TW;
Po-Chao Tsao, New Taipei, TW;
Chien-Ting Lin, Hsinchu, TW;
Shih-Fang Tzou, Tainan, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
The present invention provides a manufacturing method for forming a semiconductor structure, in which first, a substrate is provided, a hard mask is disposed on the substrate, the hard mask is then patterned to form a plurality of fin hard masks and a plurality of dummy fin hard masks, afterwards, a pattern transferring process is performed, to transfer the patterns of the fin hard masks and the fin hard masks into the substrate, so as to form a plurality of fin groups and a plurality of dummy fins. Each dummy fin is disposed on the end side of one fin group, and a fin cut process is performed, to remove each dummy fin.