The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2015
Filed:
Apr. 01, 2013
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Takayuki Katsunuma, Miyagi, JP;
Masanobu Honda, Miyagi, JP;
Hironobu Ichikawa, Miyagi, JP;
Jin Kudo, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/32669 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/67069 (2013.01); H01J 2237/334 (2013.01); H01L 21/0276 (2013.01);
Abstract
A plasma etching method for plasma etching, in a processing chamber, an antireflection film laminated on an organic film formed on a substrate by using an etching mask made of a resist film formed on the antireflection film, the plasma etching method includes: depositing a Si-containing compound on the etching mask made of the resist film by using plasma of Si-containing gas in the processing chamber; and etching the antireflection film in a state where the Si-containing compound is deposited on the etching mask.