The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Dec. 29, 2011
Charles H. Wallace, Portland, OR (US);
Swaminathan Sivakumar, Portland, OR (US);
Matthew L. Tingey, Hillsboro, OR (US);
Chanaka D. Munasinghe, Hillsboro, OR (US);
Nadia M. Rahhal-orabi, Hillsboro, OR (US);
Charles H. Wallace, Portland, OR (US);
Swaminathan Sivakumar, Portland, OR (US);
Matthew L. Tingey, Hillsboro, OR (US);
Chanaka D. Munasinghe, Hillsboro, OR (US);
Nadia M. Rahhal-Orabi, Hillsboro, OR (US);
INTEL CORPORATION, Santa Clara, CA (US);
Abstract
Techniques are disclosed for double patterning of a lithographic feature using a barrier layer between the pattern layers. In some cases, the techniques may be implemented with double patterning of a one- or two-dimensional photolithographic feature, for example. In some embodiments, the barrier layer is deposited to protect a first photoresist pattern prior to application of a second photoresist pattern thereon and/or to tailor (e.g., shrink) one or more of the critical dimensions of a trench, hole, or other etchable geometric feature to be formed in a substrate or other suitable surface via lithographic processes. In some embodiments, the techniques may be implemented to generate/print small features (e.g., less than or equal to about 100 nm) including one- and two-dimensional features/structures of varying complexity.