The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2015

Filed:

May. 23, 2013
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Tatsuhiro Okabe, Sagamahira, JP;

Atsuki Fukazawa, Tama, JP;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B 7/00 (2006.01); H01J 37/32 (2006.01); C23C 16/44 (2006.01); B08B 9/00 (2006.01); B08B 9/027 (2006.01); B08B 5/00 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32862 (2013.01); C23C 16/4405 (2013.01); H01J 37/32091 (2013.01); B08B 5/00 (2013.01); B08B 7/00 (2013.01); B08B 7/0035 (2013.01); B08B 9/00 (2013.01); B08B 9/027 (2013.01);
Abstract

A method for cleaning a reaction chamber is conducted after depositing an oxide, nitride, or oxynitride film on a substrate in a reaction chamber having interior surfaces on which oxide, nitride, or oxynitride is accumulated as a result of the deposition, said oxide, nitride, or oxynitride being selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, metal oxide, metal nitride, and metal oxynitride. The method includes: oxidizing or nitriding the oxide, nitride, or oxynitride is accumulated on the interior surfaces of the reaction chamber, by RF-excited plasma of an oxygen- or nitrogen-containing gas in the absence of halide gas as a pre-cleaning step; and cleaning the interior surfaces of the reaction chamber, by RF-excited plasma of a halide cleaning gas.

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