The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
May. 26, 2011
Hideo Ohno, Sendai, JP;
Shoji Ikeda, Sendai, JP;
Fumihiro Matsukura, Sendai, JP;
Masaki Endoh, Sendai, JP;
Shun Kanai, Sendai, JP;
Katsuya Miura, Higashimurayama, JP;
Hiroyuki Yamamoto, Shiki, JP;
Hideo Ohno, Sendai, JP;
Shoji Ikeda, Sendai, JP;
Fumihiro Matsukura, Sendai, JP;
Masaki Endoh, Sendai, JP;
Shun Kanai, Sendai, JP;
Katsuya Miura, Higashimurayama, JP;
Hiroyuki Yamamoto, Shiki, JP;
TOHOKU UNIVERSITY, Miyagi, JP;
Abstract
Provided are a magnetoresistance effect element with a stable magnetization direction perpendicular to film plane and a controlled magnetoresistance ratio, in which writing can be performed by magnetic domain wall motion, and a magnetic memory including the magnetoresistance effect element. The magnetoresistance ratio is controlled by forming a ferromagnetic layer of the magnetoresistance effect element from a ferromagnetic material including at least one type of 3d transition metal or a Heusler alloy. The magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane by controlling the film thickness of the ferromagnetic layer on an atomic layer level.