The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2015

Filed:

Feb. 23, 2011
Applicants:

Ofir Sharoni, Karkur, IL;

Vladimir Dmitriev, Karmiel, IL;

Eran Chason, Spring Grove, SG;

Guy Ben-zvi, Shechania, IL;

Igor Varvaruk, Migdal Haemek, IL;

Inventors:

Ofir Sharoni, Karkur, IL;

Vladimir Dmitriev, Karmiel, IL;

Eran Chason, Spring Grove, SG;

Guy Ben-Zvi, Shechania, IL;

Igor Varvaruk, Migdal Haemek, IL;

Assignee:

Carl Zeiss SMS Ltd., Karmiel, IL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/76 (2012.01); G01B 11/00 (2006.01); G03F 1/00 (2012.01); G03F 1/48 (2012.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G01B 11/00 (2013.01); G03F 1/144 (2013.01); G03F 1/48 (2013.01); G03F 7/70625 (2013.01);
Abstract

A contribution to a wafer level critical dimension distribution from a scanner of a lithography system can be determined based on measured wafer level critical dimension uniformity distribution and a contribution to the wafer level critical dimension distribution from a photo mask. Light transmission () across the photo mask () can be measured, a transmittance variation distribution of the photo mask can be determined, and the contribution to the wafer level critical dimension distribution from the photo mask () can be determined () based on the transmittance variation distribution of the photo mask.


Find Patent Forward Citations

Loading…