The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Aug. 21, 2014
United Microelectronics Corp., Hsinchu, TW;
Hsin-Fu Huang, Tainan, TW;
Kun-Hsien Lin, Miaoli County, TW;
Chi-Mao Hsu, Tainan, TW;
Min-Chuan Tsai, New Taipei, TW;
Tzung-Ying Lee, Pingtung County, TW;
Chin-Fu Lin, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
Provided is a semiconductor device including a substrate, a gate structure, a second dielectric layer and a source/drain region. A first dielectric layer is disposed on the substrate, and the first dielectric layer has a trench therein. The gate structure is disposed on the substrate in the trench and includes a work function metal layer and a metal layer. The work function metal layer is disposed in the trench, and includes a TiAlphase metal layer. A height of the work function metal layer disposed on a sidewall of the trench is lower than a height of a top surface of the first dielectric layer. The metal layer fills the trench. The second dielectric layer is disposed between the gate structure and the substrate. The source/drain region is disposed in the substrate at two sides of the gate structure.