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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9129945 B1

PDFFull Text
Date of Patent:
Sep. 08, 2015

Filed:

Mar. 24, 2010

Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance

Applicants:

Sang-hyeob Lee, Fremont, CA (US);

Sang Ho Yu, Cupertino, CA (US);

Wei Ti Lee, San Jose, CA (US);

Seshadri Ganguli, Sunnyvale, CA (US);

Hyoung-chan Ha, San Jose, CA (US);

Hoon Kim, Santa Clara, CA (US);

Inventors:

Sang-Hyeob Lee, Fremont, CA (US);

Sang Ho Yu, Cupertino, CA (US);

Wei Ti Lee, San Jose, CA (US);

Seshadri Ganguli, Sunnyvale, CA (US);

Hyoung-Chan Ha, San Jose, CA (US);

Hoon Kim, Santa Clara, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:

Patterson & Sheridan, LLP

Primary Examiner:

Sheng Zhu

Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/485 (2006.01); C23C 16/34 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/321 (2006.01); H01L 27/108 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 23/485 (2013.01); C23C 16/34 (2013.01); H01L 21/28088 (2013.01); H01L 21/28556 (2013.01); H01L 21/321 (2013.01); H01L 21/76846 (2013.01); H01L 21/76856 (2013.01); H01L 21/76877 (2013.01); H01L 21/76883 (2013.01); H01L 21/76886 (2013.01); H01L 23/53266 (2013.01); H01L 27/10891 (2013.01); H01L 29/4236 (2013.01); H01L 2924/0002 (2013.01);
Abstract

The invention provides a method of forming a film stack on a substrate, comprising depositing a tungsten nitride layer on the substrate, subjecting the substrate to a nitridation treatment using active nitrogen species from a remote plasma, and depositing a conductive bulk layer directly on the tungsten nitride layer without depositing a tungsten nucleation layer on the tungsten nitride layer as a growth site for tungsten.

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