The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
May. 13, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
An organosilicate polymer is used as mandrel in a two exposure double patterning process. The mandrel layer is formed from the organosilicate polymer and is patterned with a first etching process. Spacers are formed adjacent the mandrel using low temperature process. The spacer material can be a low temperature oxide. The mandrel layer is then further pattered with a second lithographic etching process. A hard mask layer is then printed with a pattern defined by the spacers and the mandrel. The hard mask can be TiN. The process provides a simplified method of double patterning that eliminates the need for a capping layer over the hard mask.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile