The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Oct. 31, 2013
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Jer-Shien Yang, Hsinchu, TW;
Huei-Ju Yu, Hsinchu, TW;
I-Ling Kuo, Taipei, TW;
Wen-Lung Ho, Hsinchu County, TW;
Chunyuan Chao, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a substrate, an imaging pixel array disposed on a first region of the substrate, a first isolation disposed in the first region, a periphery circuitry disposed on a second region of the substrate, and a second isolation disposed in the second region. The imaging pixel array has a plurality of imaging pixels configured to capture image data. The periphery circuitry has a transistor configured to receive and process the image data. The first isolation has a first depth and a first protrusion projected from a surface of the substrate. The second isolation has a second depth and a second protrusion projected from the surface of the substrate. The first protrusion has a substantially same height as the second protrusion. The first depth is different from the second depth.