The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Aug. 16, 2012
Applicants:
Shoichi Murakami, Hyogo, JP;
Naoya Ikemoto, Hyogo, JP;
Inventors:
Shoichi Murakami, Hyogo, JP;
Naoya Ikemoto, Hyogo, JP;
Assignee:
SPP Technologies Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 21/768 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0475 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 21/3085 (2013.01); H01L 21/76813 (2013.01); H01L 21/76822 (2013.01); H01L 29/1608 (2013.01);
Abstract
A plasma etching method forms a tapered recess portion in a wide-gap semiconductor substrate. The method includes forming on the substrate K an etching film having an etching speed higher than that of the substrate K, and forming a mask M having an opening on the high-speed etching film. The substrate K with the etching film and the mask is then placed on a platen and heated to a temperature equal to or higher than 200 ° C., a plasma is generated from an etching gas supplied into a processing chamber, and a bias potential is applied to the platen to etch substrate.