The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Aug. 10, 2012
Applicants:
David P. Bour, Cupertino, CA (US);
Thomas R. Prunty, Santa Clara, CA (US);
Hui Nie, Cupertino, CA (US);
Madhan M. Raj, Cupertino, CA (US);
Inventors:
David P. Bour, Cupertino, CA (US);
Thomas R. Prunty, Santa Clara, CA (US);
Hui Nie, Cupertino, CA (US);
Madhan M. Raj, Cupertino, CA (US);
Assignee:
Avogy, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02389 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02639 (2013.01); H01L 21/02642 (2013.01); H01L 21/02647 (2013.01); H01L 29/66446 (2013.01); H01L 29/66462 (2013.01); H01L 29/2003 (2013.01);
Abstract
A method of regrowing material includes providing a III-nitride structure including a masking layer and patterning the masking layer to form an etch mask. The method also includes removing, using an in-situ etch, a portion of the III-nitride structure to expose a regrowth region and regrowing a III-nitride material in the regrowth region.