The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2015

Filed:

Jun. 12, 2013
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Ryu Nakano, Sagamihara, JP;

Naoki Inoue, Hachioji, JP;

Assignee:

ASM IP HOLDING, B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/509 (2006.01); H01J 37/32 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32449 (2013.10); C23C 16/4551 (2013.01); C23C 16/4585 (2013.01); C23C 16/5096 (2013.01); H01J 37/32431 (2013.01);
Abstract

A method for controlling in-plane uniformity of a substrate processed by plasma-assisted process in a reactor, includes: supplying a principal gas to a reaction space, and discharging radially the principal gas from the reaction space through an annular duct; and supplying an secondary gas to the reaction space from an area in close proximity to an outer periphery of a susceptor, outside an outer circumference of the substrate as viewed from above, so as to flow at least partially in an inward direction passing the outer circumference of the substrate, reversing the direction of the secondary gas to flow toward the annular duct in a vicinity of the outer circumference of the substrate, and discharging radially the secondary gas together with the principal gas from the reaction space through the annular duct.

Published as:
US2014367359A1; KR20140145095A; JP2015002349A; TW201505076A; US9123510B2; TWI623024B; JP6367615B2; KR102232748B1;

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