The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Nov. 21, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chin-Sheng Chen, Taoyuan, TW;
Tsun-Yu Yang, Changhua, TW;
Wei-Yi Hu, Zhubei, TW;
Jui-Feng Kuan, Zhubei, TW;
Ching-Shun Yang, Zhudong Township, TW;
Yi-Kan Cheng, Taipei, TW;
Abstract
A method of designing a fin field effect transistor (FinFET)-based circuit includes designing, using a processor, a first circuit schematic design based on a performance specification, the first circuit schematic design is free of artificial elements, wherein the artificial elements are used to simulate electrical performance of the FinFET-based circuit. The method further includes modifying, using the processor, at least one device within the first circuit schematic design to form a second circuit schematic design taking the artificial elements into consideration. The method further includes performing a pre-layout simulation using the second circuit schematic and taking the artificial elements into consideration. The method further includes generating a layout, wherein the layout does not take the artificial elements into consideration, and performing a post-layout simulation, wherein the post-layout simulation does not take the artificial elements into consideration.