The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Jun. 05, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Chia-Hao Hsu, Hsinchu, TW;
Chia-Chen Chen, Hsinchu, TW;
Tzung-Chi Fu, Miaoli, TW;
Tzu-Wei Kao, Hsinchu, TW;
Yu Chao Lin, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manuacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 29/06 (2006.01); H01L 29/34 (2006.01); H01L 21/3215 (2006.01); G03F 7/20 (2006.01); H01L 21/265 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); G03F 7/70708 (2013.01); H01L 21/32155 (2013.01); H01L 29/0603 (2013.01); H01L 29/34 (2013.01); H01L 21/26506 (2013.01); H01L 21/6831 (2013.01);
Abstract
The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a front surface and a backside surface; integrated circuit features formed on the front surface of the semiconductor substrate; and a polycrystalline silicon layer disposed on the backside surface of the semiconductor substrate.