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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9111861 B1

PDFFull Text
Date of Patent:
Aug. 18, 2015

Filed:

Feb. 06, 2012

Method of fabricating a semiconductor structure with ion-implanted conductive layer

Applicants:

Tzu-yen Hsieh, Taipei, TW;

Ming-ching Chang, Hsinchu, TW;

Chia-wei Chang, Wufong Township, TW;

Chao-cheng Chen, Shin-Chu, TW;

Chun-hung Lee, Zhudong Town, TW;

Dai-lin Wu, Hsinchu, TW;

Inventors:

Tzu-Yen Hsieh, Taipei, TW;

Ming-Ching Chang, Hsinchu, TW;

Chia-Wei Chang, Wufong Township, TW;

Chao-Cheng Chen, Shin-Chu, TW;

Chun-Hung Lee, Zhudong Town, TW;

Dai-Lin Wu, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., , TW;

Attorney:

Lowe Hauptman & Ham, LLP

Primary Examiner:

Caleb Henry

Assistant Examiner:

Mounir Amer

Int. Cl.
CPC ...
H01L 21/266 (2006.01); H01L 21/28 (2006.01); H01L 21/033 (2006.01); H01L 21/3213 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/266 (2013.01); H01L 21/0338 (2013.01); H01L 21/28035 (2013.01); H01L 21/28123 (2013.01); H01L 21/32134 (2013.01); H01L 21/26506 (2013.01);
Abstract

An embodiment of the current disclosure includes a method of providing a substrate, forming a polysilicon layer over the substrate, forming a first photoresist layer on the polysislicon layer, creating a first pattern on the first photoresist layer, wherein some portions of the polysilicon layer are covered by the first photoresist layer and some portions of the polysilicon layer are not covered by the first photoresist layer, implanting ions into the portions of the polysilicon layer that are not covered by the first photoresist layer, removing the first photoresist layer from the polysilicon layer, forming a second photoresist layer on the polysilicon layer, creating a second pattern on the second photoresist layer, and implanting ions into the portions of the polysilicon layer that are not covered by the second photoresist layer, removing the second photoresist layer from the polysilicon layer, and removing portions of the polysilicon layer using an etchant.

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