The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Sep. 16, 2013
International Business Machines Corporation, Armonk, NY (US);
Globalfoundries Inc., Grand Cayman, KY;
Veeraraghavan S. Basker, Schenectady, NY (US);
Nathaniel Berliner, Bend, OR (US);
Hyun-Jin Cho, Palo Alto, CA (US);
Johnathan Faltermeier, Delanson, NY (US);
Kam-Leung Lee, Putnam Valley, NY (US);
Tenko Yamashita, Schenectady, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Global Foundries, Inc., Grand Cayman, KY;
Abstract
A conformal doping process for FinFET devices on a semiconductor substrate which includes NFET fins and PFET fins. In a first exemplary embodiment, an N-type dopant composition is conformally deposited over the NFET fins and the PFET fins. The semiconductor substrate is annealed to drive in an N-type dopant from the N-type dopant composition into the NFET fins. A P-type dopant composition is conformally deposited over the NFET fins and the PFET fins. The semiconductor substrate is annealed to drive in a P-type dopant from the P-type dopant composition into the PFET fins. In a second exemplary embodiment, one of the NFET fins and PFET fins may be covered with a first dopant composition and then a second dopant composition may cover both the NFET fins and the PFET fins followed by an anneal to drive in both dopants.