The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Aug. 05, 2013
Applicant:
Hitachi High-technologies Corporation, Tokyo, JP;
Inventors:
Assignee:
HITACHI HIGH-TECHNOLOGIES CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 27/115 (2006.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 29/66833 (2013.01); H01L 29/7926 (2013.01); H01L 21/31144 (2013.01); H01L 27/11556 (2013.01);
Abstract
In a process of dividing gates of multi-layered films in fabricating a NAND flash memory having a three-dimensional structure, a pattern is prevented from deforming and falling. A ratio of a length L to a height h of control gate groups configuring a memory cell of the flash memory is set to be less than 1.65 which is a range in which buckling does not occur. It is desirable that a ratio of a length L to a width W of the control gate groups is set to be less than 16.5.