The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Oct. 28, 2013
Tokyo Electron Limited, Tokyo, JP;
Hiroie Matsumoto, Albany, NY (US);
Kazuto Ogawa, Miyagi, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
Provided are a plasma processing method and a plasma processing apparatus which may form a protective film on the surface of an etching stop layer and suppress clogging of openings of holes when etching an oxide layer are provided. The plasma processing method forms a plurality of holes having different depths in multi-layered films that include an oxide layer, a plurality of etching stop layers made of tungsten, and a mask layer. The plasma processing method includes an etching process in which a processing gas is supplied to generate plasma such that etching is performed from the top surface of the oxide layer to the plurality of etching stop layers so as to form hole having different depths in the oxide layer. Here, the processing gas includes a fluorocarbon-based gas, a rare gas, oxygen, and nitrogen.