The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Dec. 26, 2011
Applicants:
James Yang, Union City, CA (US);
Stanley Liu, Shanghai, CN;
Zhaohui Xi, Shanghai, CN;
Inventors:
Assignee:
ADVANCED MICRO-FABRICATION EQUIPMENT, INC. ASIA, Georgetown, Grand Cayman, KY;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/00 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); H03H 7/40 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32082 (2013.01); H01J 37/3299 (2013.01); H01J 37/32174 (2013.01); H01J 37/32183 (2013.01); H01J 37/32935 (2013.01); H01L 21/31116 (2013.01); H03H 7/40 (2013.01);
Abstract
A reactive correction to chamber impedance changes without the need to change the process recipe is disclosed. The reactive correction may be done automatically and repeatedly during processing. A control of RF power application to a plasma processing chamber is performed, so as to minimize reflected power and efficiently apply the RF power to the plasma. Autotuning of the RF power application is enabled without modifying a qualified process recipe. The autotuning can be applied using frequency matching and RF matching network tuning.