The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Aug. 01, 2013
Applicant:
Asahi Glass Company, Limited, Chiyoda-ku, JP;
Inventors:
Assignee:
Asahi Glass Company, Limited, Chiyoda-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/54 (2012.01); G03F 1/80 (2012.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); G03F 1/54 (2013.01); G03F 1/80 (2013.01);
Abstract
To provide an EUV mask blank with which the etching selectivity under etching conditions for absorber layer is sufficiently high, line edge roughness after pattern formation will not be large, and a pattern with high resolution can be obtained. A reflective mask blank for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light, an absorber layer for absorbing EUV light and a hard mask layer formed in this order on the substrate;