The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Jan. 24, 2013
Hitachi High-technologies Corporation, Minato-ku, Tokyo, JP;
Makoto Satake, Tokyo, JP;
Jun Hayakawa, Hino, JP;
Tsutomu Tetsuka, Kasumigaura, JP;
Takeshi Shimada, Hikari, JP;
Naohiro Yamamoto, Kudamatsu, JP;
Atsushi Yoshida, Kudamatsu, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
The present invention provides a method for manufacturing a magnetoresistive element having a high selection ratio of an insulating layer to a free layer. The method for manufacturing a magnetoresistive element includes the steps of preparing (left drawing, middle drawing) a substrate on which a free layer, a fixed layer disposed under a first magnetic layer, and a barrier layer that is an insulating layer disposed between the free layer and the fixed layer are formed and processing (right drawing) the free layer by plasma etching, in which an insulating layer configuring the barrier layer contains a Ta element or a Ti element.