The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Jul. 02, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Sunil Kumar Singh, Mirzapur, IN;
Hsin-Chieh Yao, Hsinchu, TW;
Chung-Ju Lee, Hsinchu, TW;
Hsiang-Huan Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming a semiconductor device includes forming a plurality of substantially equal-spaced first spacers having a first pitch over a substrate and forming first metal interconnecting wires utilizing the first spacers. The method also includes forming a plurality of substantially equal-spaced second spacers in such a way to abut, respectively, the plurality of first metal interconnecting wires and define a plurality of substantially equal-spaced trenches. A plurality of second metal interconnecting wires are disposed, respectively, within the trenches and the second spacers are removed, thereby defining a plurality of substantially equal-spaced channels.