The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Feb. 22, 2007
George Liu, Sin-Chu, TW;
Vencent Chang, Hsin-Chu, TW;
Norman Chen, Hsinchu, TW;
Kuei Shun Chen, Hsin-Chu, TW;
Chin-hsiang Lin, Hsin-Chu, TW;
George Liu, Sin-Chu, TW;
Vencent Chang, Hsin-Chu, TW;
Norman Chen, Hsinchu, TW;
Kuei Shun Chen, Hsin-Chu, TW;
Chin-Hsiang Lin, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Contrast enhancing exposure apparatus and method for use in semiconductor fabrication are described. In one embodiment, a method for forming a pattern on a substrate, wherein the substrate includes a photoresist layer comprising photoacid generators ('PAGs') and photobase generators ('PBGs'), is described. The method includes dividing the pattern into two component patterns; exposing the photoresist layer of the substrate to UV light through a first mask corresponding to a first one of the component patterns; subsequent to the exposing the photoresist layer of the substrate to UV light through the first mask, exposing the photoresist layer of the substrate to UV light through a second mask corresponding to a second one of the component patterns, wherein the PAGs and PBGs disposed in areas of the photoresist layer that have been exposed to UV light at least twice are activated and wherein the activated PAGs neutralize the activated PBGs in areas of the photoresist layer that have been exposed to UV light at least twice.