The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Aug. 25, 2014
Tokyo Electron Limited, Tokyo, JP;
Kazuto Ogawa, Tokyo, JP;
Katsunori Hirai, Miyagi, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A direction change of space formed in an etching target layer can be suppressed while maintaining an etching selectivity for the etching target layer against a mask. A semiconductor device manufacturing method MT includes exciting a first gas by supplying the first gas containing a fluorocarbon gas, a fluorohydrocarbon gas and an oxygen gas into a processing chamber(ST); and exciting a second gas by supplying the second gas containing an oxygen gas and a rare gas into the processing chamber (ST), and a cycle including the exciting of the first gas (ST) and the exciting of the second gas (ST) is repeated multiple times.