The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
May. 30, 2013
Applied Materials, Inc., Santa Clara, CA (US);
Paul F. Ma, Santa Clara, CA (US);
Jennifer Meng Tseng, Saratoga, CA (US);
Mei Chang, Saratoga, CA (US);
Annamalai Lakshmanan, Fremont, CA (US);
Jing Tang, Cupertino, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Described are methods of forming a semiconductor device. Certain methods comprises depositing a film comprising manganese nitride over a dielectric; depositing a copper seed layer over the film; and depositing a copper fill layer over the copper seed layer. Also described are semiconductor devices. Certain semiconductor devices comprise a low-k dielectric layer; a manganese nitride layer overlying the low-k dielectric layer; a seed layer selected from a copper seed layer or electrochemical deposition seed layer overlying the manganese nitride layer; a copper layer overlying the copper seed layer.