The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2015

Filed:

Oct. 16, 2014
Applicant:

Kec Corporation, Seoul, KR;

Inventors:

Kyu Hyo Hwang, Gyeongsangbuk-do, KR;

Jong Hong Lee, Seoul, KR;

Gab Soo Choi, Gyeongsangbuk-do, KR;

Cha Soo Jeon, Daegu, KR;

Jin Sang Park, Gyeongsangbuk-do, KR;

Sang Bo Bae, Gyeongsangbuk-do, KR;

Yong Min Park, Gyeongsangbuk-do, KR;

Sung Jin An, Gyeongsangbuk-do, KR;

Assignee:

KEC Corporation, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H01L 24/06 (2013.01); H01L 23/49513 (2013.01); H01L 23/49575 (2013.01); H01L 23/49531 (2013.01); H01L 23/49582 (2013.01); H01L 2224/065 (2013.01); H01L 2924/15701 (2013.01); H01L 2924/15724 (2013.01);
Abstract

Provided are a semiconductor device and a bonding structure thereof, in which an inter-metal compound is not formed with a semiconductor die or a lead frame, thereby improving electrical and mechanical properties and wettability and suppressing conglomeration of a die bonding material. The semiconductor device includes a semiconductor die, a barrier layer formed on a surface of the semiconductor die, a first metal layer formed on the barrier layer, a central metal layer formed on the first metal layer, and a second metal layer formed on the central metal layer. Here, the first and second metal layers have a first melting temperature, and the central metal layer has a second melting temperature lower than the first melting temperature.


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