The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2015

Filed:

Mar. 15, 2013
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventors:

Bon-Woong Koo, Andover, MA (US);

Richard M. White, Newmarket, NH (US);

Svetlana B. Radovanov, Brookline, MA (US);

Kevin M. Daniels, Lynnfield, MA (US);

Eric R. Cobb, Danvers, MA (US);

David W. Pitman, Beverly, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); C23C 14/48 (2006.01); H01J 37/317 (2006.01); H01J 37/08 (2006.01);
U.S. Cl.
CPC ...
H01L 21/265 (2013.01); C23C 14/48 (2013.01); H01J 37/3171 (2013.01); H01J 37/08 (2013.01); H01J 2237/0825 (2013.01); H01J 2237/006 (2013.01); H01J 2237/022 (2013.01);
Abstract

Techniques for processing a substrate are disclosed. In one exemplary embodiment, the technique may be realized as a method for processing a substrate, the method comprising: ionizing first material and second material in an ion source chamber of an ion source, the first material being boron (B) containing material, the second material being one of phosphorous (P) containing material and arsenic (As) containing material; generating first ions containing B and second ions containing one of P and As; and extracting the first and second ions from the ion source chamber and directing the first and second ions toward the substrate.


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