The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Dec. 03, 2012
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Min-Hsin Hsieh, Zhubei, TW;
Tsung-Hsien Lee, Tainan, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G03F 7/20 (2006.01); G03F 1/00 (2012.01);
U.S. Cl.
CPC ...
G03F 7/705 (2013.01); G03F 1/144 (2013.01); G06F 17/5045 (2013.01);
Abstract
A method of generating a set of defect candidates for a wafer includes generating a filtration area according to a graph operation of one or more of a plurality of layout areas. The wafer includes at least one die manufactured according to a mask, and the mask is prepared by combining the plurality of layout areas. The method further includes generating the set of defect candidates by omitting a subset of initial defect candidates having positions within the filtration area.