The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Mar. 05, 2013
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Mu-Chen Chen, Jhubei, TW;
Yi-Tse Huang, Qionglin Township, TW;
Wei-Fan Liao, Donggang Township, TW;
Han-Ti Hsiaw, Zhubei, TW;
Chia-I Shen, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01L 21/312 (2006.01); H01L 21/322 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67051 (2013.01); H01L 21/312 (2013.01); H01L 21/3065 (2013.01); H01L 21/31138 (2013.01); H01L 21/3225 (2013.01); H01L 21/308 (2013.01); H01L 21/67028 (2013.01); H01L 21/02063 (2013.01); H01L 21/0209 (2013.01); H01L 21/31133 (2013.01);
Abstract
A method for removing photoresist residue includes etching a photoresist layer disposed over a front side of a semiconductor substrate during fabrication of a semiconductor device, and exposing at least one of the front side and the back side of the semiconductor substrate to an atmosphere comprising active oxygen. The method further includes cleaning at least one of the front side and the back side of the semiconductor substrate with a cleaning fluid.