The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Sep. 26, 2013
Applicant:
Jsr Corporation, Tokyo, JP;
Inventors:
Hiromitsu Nakashima, Tokyo, JP;
Toru Kimura, Tokyo, JP;
Yusuke Asano, Tokyo, JP;
Masafumi Hori, Tokyo, JP;
Reiko Kimura, Tokyo, JP;
Kazuki Kasahara, Tokyo, JP;
Hiromu Miyata, Tokyo, JP;
Masafumi Yoshida, Tokyo, JP;
Assignee:
JSR CORPORATION, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); C08F 12/20 (2006.01); H01L 21/027 (2006.01); C08F 220/22 (2006.01); C08F 220/24 (2006.01); C08F 220/28 (2006.01); G03F 7/20 (2006.01); G03F 7/039 (2006.01); G03F 7/11 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0041 (2013.01); H01L 21/027 (2013.01); H01L 21/0274 (2013.01); C08F 220/22 (2013.01); C08F 220/24 (2013.01); C08F 220/28 (2013.01); C08F 2220/283 (2013.01); G03F 7/2041 (2013.01); G03F 7/0045 (2013.01); G03F 7/0046 (2013.01); G03F 7/0397 (2013.01); G03F 7/11 (2013.01);
Abstract
A resist pattern-forming method includes providing a resist film having a surface free energy of 30 to 40 mN/m on a substrate using a radiation-sensitive resin composition. The resist film is exposed by applying radiation via a mask. The exposed resist film is developed. It is preferable that the exposing of the resist film includes exposing the resist film via an immersion liquid that is provided over the resist film.