The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2015

Filed:

Oct. 16, 2007
Applicants:

Paul MA, Sunnyvale, CA (US);

Kavita Shah, Sunnyvale, CA (US);

Dien-yeh Wu, San Jose, CA (US);

Seshadri Ganguli, Sunnyvale, CA (US);

Christophe Marcadal, Santa Clara, CA (US);

Frederick C. Wu, Cupertino, CA (US);

Schubert S. Chu, San Francisco, CA (US);

Inventors:

Paul Ma, Sunnyvale, CA (US);

Kavita Shah, Sunnyvale, CA (US);

Dien-Yeh Wu, San Jose, CA (US);

Seshadri Ganguli, Sunnyvale, CA (US);

Christophe Marcadal, Santa Clara, CA (US);

Frederick C. Wu, Cupertino, CA (US);

Schubert S. Chu, San Francisco, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/50 (2006.01); C23C 16/455 (2006.01); C23C 16/18 (2006.01); C23C 16/509 (2006.01); H01J 37/32 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45544 (2013.01); C23C 16/18 (2013.01); C23C 16/45536 (2013.01); C23C 16/45542 (2013.01); C23C 16/45553 (2013.01); C23C 16/45563 (2013.01); C23C 16/45565 (2013.01); C23C 16/509 (2013.01); C23C 16/5096 (2013.01); H01J 37/32082 (2013.01); H01J 37/3244 (2013.01); H01J 37/32449 (2013.01); H01J 37/32522 (2013.01); H01J 37/32623 (2013.01); H01J 37/32633 (2013.01); H01L 21/28562 (2013.01); H01L 21/76844 (2013.01); H01L 21/76846 (2013.01); H01L 21/76873 (2013.01); H01L 2221/1089 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a plasma baffle assembly for receiving a process gas within a plasma-enhanced vapor deposition chamber is provided which includes a plasma baffle plate containing an upper surface to receive a process gas and a lower surface to emit the process gas, a plurality of openings configured to flow the process gas from above the upper surface to below the lower surface, wherein each opening is positioned at a predetermined angle of a vertical axis that is perpendicular to the lower surface, and a conical nose cone on the upper surface. In one example, the openings are slots positioned at a predetermined angle to emit the process gas with a circular flow pattern.


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