The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2015

Filed:

Jul. 31, 2013
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventors:

Bon-Woong Koo, Andover, MA (US);

Victor Benveniste, Lyle, WA (US);

Christopher A. Rowland, Rockport, MA (US);

Craig R. Chaney, Lanesville, MA (US);

Frank Sinclair, Boston, MA (US);

Neil J. Bassom, Hamilton, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 27/02 (2006.01); H01J 27/08 (2006.01); H01J 37/08 (2006.01); H01J 37/317 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 27/022 (2013.01); H01J 37/08 (2013.01); H01J 37/3171 (2013.01); H01J 37/32357 (2013.01); H01J 37/32412 (2013.01); H01J 37/32422 (2013.01); H01J 2237/006 (2013.01); H01J 2237/061 (2013.01); H01J 2237/0815 (2013.01); H01J 2237/24514 (2013.01);
Abstract

An ion source includes an ion chamber housing defining an ion source chamber, the ion chamber housing having a side with a plurality of apertures. The ion source also includes an antechamber housing defining an antechamber. The antechamber housing shares the side with the plurality of apertures with the ion chamber housing. The antechamber housing has an opening to receive a gas from a gas source. The antechamber is configured to transform the gas into an altered state having excited neutrals that is provided through the plurality of apertures into the ion source chamber.


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