The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2015

Filed:

Feb. 24, 2012
Applicants:

Toru Ito, Kudamatsu, JP;

Hiroaki Ishimura, Kudamatsu, JP;

Akito Kouchi, Kudamatsu, JP;

Hayato Watanabe, Hofu, JP;

Inventors:

Toru Ito, Kudamatsu, JP;

Hiroaki Ishimura, Kudamatsu, JP;

Akito Kouchi, Kudamatsu, JP;

Hayato Watanabe, Hofu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76229 (2013.01);
Abstract

The present invention provides a plasma processing method in which sideetching and microloading can be suppressed in a plasma processing method of forming trenches with a mask having a minimum opening width of 20 nm or less. The plasma processing method of the present invention is characterized by including the steps of forming trenches by plasma etching, forming a nitride film on sidewalls of trenches using plasma, and forming an oxide film on sidewalls and bottom surfaces of the trenches using plasma.


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