The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Feb. 07, 2013
Applicant:
Hitachi High-technologies Corporation, Minato-ku, Tokyo, JP;
Inventors:
Atsushi Yoshida, Kudamatsu, JP;
Naohiro Yamamoto, Kudamatsu, JP;
Makoto Suyama, Shunan, JP;
Kentaro Yamada, Shunan, JP;
Daisuke Fujita, Kudamatsu, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); G11C 11/02 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
G11C 11/02 (2013.01); H01L 43/12 (2013.01);
Abstract
A plasma etching method performs plasma etching on a sample, which has laminated films containing a variable layer of a magnetic film, a barrier layer of an insulating material, and a fixed layer of a magnetic film, using a hard mask, which includes at least one of a Ta film and a TiN film. The plasma etching method includes a first step of etching the laminated films using Ngas; and a second step of etching the laminated films after the first step using mixed gas of Ngas and gas containing carbon elements.