The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2015

Filed:

Aug. 04, 2008
Applicants:

Daewon Yang, Hopewell Junction, NY (US);

Kangguo Cheng, Guilderland, NY (US);

Pavel Smetana, Poughkeepsie, NY (US);

Richard S. Wise, Newburgh, NY (US);

Keith Kwong Hon Wong, Wappingers Falls, NY (US);

Inventors:

Daewon Yang, Hopewell Junction, NY (US);

Kangguo Cheng, Guilderland, NY (US);

Pavel Smetana, Poughkeepsie, NY (US);

Richard S. Wise, Newburgh, NY (US);

Keith Kwong Hon Wong, Wappingers Falls, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); C23C 16/00 (2006.01); C23C 16/507 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/56 (2006.01); H01J 37/20 (2006.01); H01J 37/32 (2006.01); H01L 27/108 (2006.01); H01L 21/316 (2006.01); H01L 21/318 (2006.01);
U.S. Cl.
CPC ...
C23C 16/507 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/45578 (2013.01); C23C 16/4586 (2013.01); C23C 16/56 (2013.01); H01J 37/20 (2013.01); H01J 37/321 (2013.01); H01J 2237/20207 (2013.01); H01J 2237/3323 (2013.01); H01L 21/31608 (2013.01); H01L 21/3185 (2013.01); H01L 27/10867 (2013.01);
Abstract

A high-density plasma chemical vapor deposition tool and the method for use of the tool is disclosed. The chemical vapor deposition tool allows for angular adjustment of the pedestal that holds the substrate being manufactured. Electromagnets serve as an 'electron filter' that allows for angular deposition of material onto the substrate. Methods for fabrication of trench structures and asymmetrical spacers in a semiconductor manufacturing process are also disclosed. The angular deposition saves process steps, thereby reducing time, complexity, and cost of manufacture, while improving overall product yield.


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