The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Jul. 15, 2013
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Macronix International Co., Inc., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 29/40 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/401 (2013.01); H01L 21/823835 (2013.01); H01L 29/78 (2013.01); H01L 21/28273 (2013.01); H01L 29/42324 (2013.01); H01L 27/11521 (2013.01);
Abstract
A self-align method of preparing semiconductor gates for formation of a silicide, such as a cobalt silicide (CoSi) layer, is disclosed. Deposition of silicon nitride (SiN) and low-temperature oxide (LTO) liner types, the SiN liner having an overhang structure, prevent damage to the gates while forming a self-aligned source. The undamaged gates are suitable for CoSi deposition.