The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2015

Filed:

Jun. 23, 2011
Applicants:

Zigmund R. Camacho, Singapore, SG;

Henry D. Bathan, Singapore, SG;

Emmanuel A. Espiritu, Singapore, SG;

Inventors:

Zigmund R. Camacho, Singapore, SG;

Henry D. Bathan, Singapore, SG;

Emmanuel A. Espiritu, Singapore, SG;

Assignee:

STATS ChipPAC, Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/36 (2006.01); H01L 29/74 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 24/96 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/97 (2013.01); H01L 25/105 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/19 (2013.01); H01L 2224/96 (2013.01); H01L 2224/97 (2013.01); H01L 2225/1035 (2013.01); H01L 2924/00 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/014 (2013.01); H01L 2924/07802 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A semiconductor device has a carrier with a die attach area. Recesses are formed partially through the carrier outside the die attach area. A first conductive layer is conformally applied over a surface of the carrier and into the recesses. A semiconductor die is mounted to the die attach area of the carrier. An encapsulant is deposited over the carrier and semiconductor die. The encapsulant extends into the recesses over the first conductive layer to form encapsulant bumps. The carrier is removed to expose the first conductive layer over the encapsulant bumps. A first insulating layer is formed over the semiconductor die with openings to expose contact pads of the semiconductor die. A second conductive layer is formed between the first conductive layer and the contact pads on the semiconductor die. A second insulating layer is formed over the second conductive layer and semiconductor die.


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