The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Jun. 30, 2012
Kun Xu, Fremont, CA (US);
Jimin Zhang, San Jose, CA (US);
David H. Mai, Palo Alto, CA (US);
Stephen Jew, San Jose, CA (US);
Shih-haur Walters Shen, Hsin-Chu, TW;
Zhihong Wang, Santa Clara, CA (US);
Thomas H. Osterheld, Mountain View, CA (US);
Wen-chiang Tu, Mountain View, CA (US);
Gary Ka Ho Lam, Santa Clara, CA (US);
Tomohiko Kitajima, Santa Clara, CA (US);
Kun Xu, Fremont, CA (US);
Jimin Zhang, San Jose, CA (US);
David H. Mai, Palo Alto, CA (US);
Stephen Jew, San Jose, CA (US);
Shih-Haur Walters Shen, Hsin-Chu, TW;
Zhihong Wang, Santa Clara, CA (US);
Thomas H. Osterheld, Mountain View, CA (US);
Wen-Chiang Tu, Mountain View, CA (US);
Gary Ka Ho Lam, Santa Clara, CA (US);
Tomohiko Kitajima, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.