The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Oct. 01, 2013
Applicant:

Chipbond Technology Corporation, Hsinchu, TW;

Inventors:

Chin-Tang Hsieh, Kaohsiung, TW;

You-Ming Hsu, Kaohsiung, TW;

Ming-Sheng Liu, Hsinchu, TW;

Chih-Ping Wang, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 23/00 (2006.01); H01L 23/28 (2006.01); H01L 23/532 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 23/28 (2013.01); H01L 23/53295 (2013.01); H01L 23/3192 (2013.01);
Abstract

A semiconductor structure includes a carrier, a first protective layer, a second protective layer, and a third protective layer. A first surface of the first protective layer comprises a first anti-stress zone. A first extension line from a first bottom edge intersects with a second extension line from a second bottom edge to form a first base point. A first projection line is formed on the first surface, an extension line of the first projection line intersects with the second bottom edge to form a first intersection point, a second projection line is formed on the first surface, and an extension line of the second projection line intersects with the first bottom edge to form a second intersection point. A zone by connecting the first base point, the first intersection point and the second intersection point is the first anti-stress zone.


Find Patent Forward Citations

Loading…