The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Jul. 18, 2012
Applicants:
Purakh Raj Verma, Singapore, SG;
Liang Yi, Singapore, SG;
Yemin Dong, Singapore, SG;
Inventors:
Assignee:
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/332 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/82385 (2013.01); H01L 29/0878 (2013.01); H01L 29/4236 (2013.01); H01L 29/42368 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/66689 (2013.01); H01L 29/66704 (2013.01); H01L 29/7825 (2013.01);
Abstract
A method of forming a device is disclosed. A substrate defined with a device region is provided. A gate having an upper and a lower portion is formed in a trench in the substrate in the device region. The upper portion forms a gate electrode and the lower portion forms a gate field plate. First and second surface doped regions are formed adjacent to the gate. The gate field plate introduces vertical reduced surface (RESURF) effect in a drift region of the device.