The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Aug. 03, 2012
Ming-shu Kuo, San Ramon, CA (US);
Siyi LI, Fremont, CA (US);
Yifeng Zhou, Fremont, CA (US);
Ratndeep Srivastava, Sunnyvale, CA (US);
Tae Won Kim, Dublin, CA (US);
Gowri Kamarthy, Pleasanton, CA (US);
Ming-Shu Kuo, San Ramon, CA (US);
Siyi Li, Fremont, CA (US);
Yifeng Zhou, Fremont, CA (US);
Ratndeep Srivastava, Sunnyvale, CA (US);
Tae Won Kim, Dublin, CA (US);
Gowri Kamarthy, Pleasanton, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for forming via holes in an etch layer disposed below a patterned organic mask with a plurality of patterned via holes is provided. The patterned organic mask is treated by flowing a treatment gas comprising H. A plasma is formed from the treatment gas. The patterned via holes are rounded to form patterned rounded via holes by exposing the patterned via holes to the plasma. The flow of the treatment gas is stopped. The plurality of patterned rounded via holes are transferred into the etch layer.